Aluminium Nitride Substrates Gold Ink Radio Frequency Microwave Devices Pottery Printed Circuit Board Assembly

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Aluminum Nitride (AlN) is an excellent solution for many electronic applications due to its combination of high thermal conductivity with strong electrical resistance. This allows electrical systems to dissolve heat quickly and maintain efficiency. Xing DA has rich experiences in aluminum nitride production.

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Product Details

Introduction

Aluminum Nitride substrates possess thermal gradient properties that allow for superior heat uniformity. These chemically"clean"substrates meet tough clean room environment requirements for the semiconductor, medical and other stringent applications.

Aluminum Nitride (AlN) materials have high thermal conductivity, high electric insulation and have a coefficient of thermal expansion similar to that of silicon (Si). It is used as a substrate for power module and LED.

Applications
Heat dissipation substrate, LED package, Power module, Wafer bonding, Power resistor.

Material Characteristics for Alumina Substrates (Al2O3), Zirconia Toughened Alumina Substrates (Al2O3/ZrO2), and Aluminum Nitride (AlN) Substrates,and Silicon Nitride(Si3N4)

Parameter

		Condition	Unit	AI1O2		AI2O3/ZrO2	AIN			Si3N4
		Condition	Unit	HA-96-2	HBS	ZTA	AN-170	AN-200	AN-230	SN-90
Material				96%	96.5%	AI2O3/ZrO2	AIN	AIN	AIN	Si3N4
Color				white	white	white	gray	gray	beige	gray
Bulk density			g/cm³	3.75	3.75	4.00	3.30	3.28	3.25	3.22
Surface roughness RA			um	0.4	0.3	0.2	0.3	0.5		0.4
Reflectivity		0.3-0.4mmt	%	70	70	80	35
Reflectivity		0.8-1.0mmt	%	80	80	90	25
Mechanical	Bending strengh	3-point method	MPa	400	500	700	450	250	200	800
	Modulus of elasticity		GPa	330	330	310	320			310
	Vickers hardness		GPa	14	14	15	11			15
	Fracture toughness	IF method	MPa.M	3.0		3.5	3.0			6.5
Thermal	Coefficient of thermal expansion	40-400℃	10-6/K	6.7	6.7	7.1	4.6	4.6	4.6	2.6
	Coefficient of thermal expansion	40-800℃	10-6/K	7.8	7.8	8.0	5.2	5.2	5.2	3.1
	Thermal conductivity	25℃	W/M.K	24	24	27	180	200	230	85
	Thermal conductivity	300℃	W/M.K	12	12	16	120	130	145
	Specific heat	25℃	J/kg.k	750	750	720	720	720	720	680
Electeical	Dielectric constant	1MHz		9.8	9.8	10.2	9.0	8.7	8.7	9.0
	Dielectric loss factor	1MHz	10-3	0.2	0.2	0.2	0.2	0.2	0.2	0.2
	Volume resistivity	25℃	Ω.cm	>1014	>1014	>1014	>1014	>1014	>1014	>1014
	Breakdown strength	DC	kv/mm	>15	>15	>15	>15	>15	>15	>15

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